Advances in transistor technology with triply degenerate semimetal PtBi₂

Despite its promising characteristics in condensed matter physics, the triply degenerate semimetal PtBi_two has been largely unexplored in practical applications, particularly in semiconductor technology. Key difficulties include the lack of empirical data on PtBi integration_two with existing semiconductor components and the need for innovative approaches to take advantage of their unique properties, such as high stability and mobility, within the constraints of current electronic manufacturing processes.

Addressing these challenges could unlock new possibilities in transistor design and broader semiconductor applications, making it crucial to explore PtBi’s practical applicability._two in real-world electronics.

A research team from the Songshan Lake Materials laboratory successfully used PtBi_two flakes as interlayer contact between metal electrodes (Au) and WS_two, a widely studied semiconductor. This method significantly improved transistor performance, achieving a switching ratio above 10⁶ and an average mobility of 85 cm²V⁻¹s⁻¹, meeting and potentially exceeding the rigorous demands of integrated circuit applications.

The work is published in the journal Materials Futures.

Future research is poised to explore diverse PtBi_twodevice-based device architectures, focusing on optimizing the interplay between device miniaturization and improved performance. Given its promising electronic properties, the application of PtBi_two could extend beyond traditional transistors to optoelectronic and spintronic devices.

“PtBi_two stands out due to its unique electronic structure, exceptional stability in air, and ability to facilitate van der Waals contacts, which simplifies the device manufacturing process and leads to stable, long-term device performance,” explained Prof. Lin , one of the lead researchers on the study.

“This material not only reduces the Schottky barrier, which is a common challenge in transistor technology, but also prevents the Fermi pinning effect that occurs during metal deposition.”

One of the most notable aspects of the study is its use of a non-destructive van der Waals transfer technique, which maintains the integrity of materials and interfaces. The researchers believe this method will offer a new path to integrate new materials into semiconductor technology.

The findings are expected to have broad implications for the semiconductor industry, providing a new materials platform for developing more energy-efficient and high-functionality electronic devices. The team is optimistic about future applications of PtBi_twonot only in transistors but also in optoelectronic and spintronic devices.